| Autor: |
Andreas Oberstedt, P Davidsson, Göran Hugo Nyman, Per Delsing, Saleh Qutaishat, Björn Jonson, Mats Lindroos, Richard Kroc, S. Norrman |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 350:250-262 |
| ISSN: |
0168-9002 |
| Popis: |
Fabrication of a thermal detector designed for high resolution spectroscopy of low-energy radiation is described. Details of the micromachining of pure silicon are given including the etching of the 0.1 mm 3 absorber and the doping process to obtain the temperature sensing thermistor which is an integrated part of the absorber. The cryogenic system, the signal processing at working temperatures around 50 mK and the data acquisition system are discussed. Theoretical aspects of the intrinsic resolving power are presented. The relation between the intrinsic detector resolution and particle energy at different working temperatures is derived. Measured resistance vs temperature is shown for thermistors made with different dopings on wafers with different initial wafer resistivity. The influence of the initial wafer purity on the R - T characteristic curves is discussed. The optimal implantation dose was determined for thermistors implanted in high purity wafers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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