Lithography independent nanostructuring of Bi2Te3 thermoelectric devices
| Autor: | D. Merten, R.P. Poloczek, J. Zimmermann, F. J. Giebel, H. L. Fiedler, K. T. Kallis, P. Lilienthal |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Fabrication business.industry Order (ring theory) 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences chemistry.chemical_compound Resist chemistry Electrical resistivity and conductivity Thermoelectric effect Optoelectronics Production (computer science) Bismuth telluride 0210 nano-technology business Lithography |
| Zdroj: | 2017 14th IEEE India Council International Conference (INDICON). |
| Popis: | In order to combine the excellent thermoelectric features of nanostructured bismuth telluride (Bi 2 Te 3 ) at room temperature without using any expensive lithography processes, the formation of Bi 2 Te 3 -thermolegs inside an in-plane thermoelectric device is executed with a lithography independent deposition- and reactive ion back-etching process. The resulting nanostructured thermolegs have a width and height in the magnitude of a few hundred nanometers and length in the millimeter regime and are finally interconnected with structures of titanium nitride. This paper presents a concept for a simple fabrication of in-plane thermoelectric devices as well as the production and electrical measurement of the first prototypes. The resulting electrical conductivity of the thermolegs are $57.782^{\ast}10^{3}\Omega^{-1}\mathrm{m}^{-1}$ for n-type and $3.579^{\ast10}10^{3} \Omega^{-1}\mathrm{m}^{-1}$ for p-type Bi 2 Te 3 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|