Exploration of Monolayer MoS2 Template-Induced Growth of GaN Thin Films via Plasma-Enhanced Atomic Layer Deposition
| Autor: | Yimeng Song, Huiyun Wei, Qianming Huang, Mingzeng Peng, Yangfeng Li, Yingfeng He, Peng Qiu, Zhiquan He, Xinhe Zheng, Junhui Die |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
010405 organic chemistry chemistry.chemical_element General Chemistry Plasma 010402 general chemistry Condensed Matter Physics 01 natural sciences 0104 chemical sciences chemistry.chemical_compound Atomic layer deposition chemistry Chemical engineering Monolayer General Materials Science Triethylgallium Thin film Gallium |
| Zdroj: | Crystal Growth & Design. 21:1778-1785 |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/acs.cgd.0c01650 |
| Popis: | GaN thin films have been directly grown on monolayer MoS2 by plasma-enhanced atomic layer deposition at 260 °C using triethylgallium as the gallium precursor along with Ar/N2/H2 plasma for the firs... |
| Databáze: | OpenAIRE |
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