Microstructures, electrical and magnetic properties of (Ga, Co)-ZnO films by radio frequency magnetron co-sputtering
| Autor: | Chao-Feng Lu, Hui Sun, Tung-Han Chuang, Chao-Kuang Wen, Chia-Lung Tsai, Chung-Hsien Wang, Yi-Keng Fu, Sheng-Chi Chen |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry 02 engineering and technology Surfaces and Interfaces General Chemistry Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Grain size Surfaces Coatings and Films Nuclear magnetic resonance Ferromagnetism Sputtering Electrical resistivity and conductivity Hall effect Phase (matter) 0103 physical sciences Materials Chemistry 0210 nano-technology |
| Zdroj: | Surface and Coatings Technology. 303:203-208 |
| ISSN: | 0257-8972 |
| Popis: | In this study, [Co0.05GaxZn(0.95 − x)O] films with different Ga contents were co-sputtered on glass substrates by rf magnetron sputtering. The content of Co in the films was fixed at ~ 5 at.%. The content of x [Ga/(Ga + Co + Zn)] varied from 0 to 3.2 at.%. As analyzed by Hall effect measurement, the resistivity (ρ) of the film is 42.90 Ω·cm when x content is 0. When the content of x increases to 3.2 at.%, the ρ value drops greatly to 4.93 × 10− 3 Ω·cm. It is found that both the surface roughness and grain size of columnar (Ga, Co)-ZnO films decrease significantly after Ga addition into the films, but the phase structure remains almost unchanged. In magnetic properties analysis, two distinct mechanisms of bound magnetic polaron and carrier-mediated exchange lead to the films presenting different ferromagnetic behaviors in various carrier density regions. |
| Databáze: | OpenAIRE |
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