Effect of ozone radical treatment for high-performance poly-Si TFTs

Autor:	Tatsuaki Hirata, Koji Kotani, Shin-Ichiro Kuroki, Tadashi Sato, Masayuki Yamano, Takamaro Kikkawa
Rok vydání:	2014
Předmět:	Radical treatment Electron mobility Ozone Materials science business.industry Nanocrystalline silicon Crystal chemistry.chemical_compound chemistry Thin-film transistor Electronic engineering Optoelectronics Grain boundary Current (fluid) business
Zdroj:	2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
DOI:	10.1109/am-fpd.2014.6867167
Popis:	High-performance low-temperature poly-Si thin film transistor (LTPS-TFT) with one-dimensionally elongated long crystal grains have been developed. In the LTPS TFTs, the carrier mobility is enhanced, however the off-leakage current also increase. This is because, grain boundary become longer, and bridge the distance between source and drain, and the grain boundary bridge become a current-leakage path. In this paper, we suggest a novel ozone radical treatment for reducing the off-leakage current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9738c59b0ba686e2851f93a2c93ff38d https://doi.org/10.1109/am-fpd.2014.6867167 Zobrazit plný text záznamu