A new recombination model for device simulation including tunneling
| Autor: | D.B.M. Klaassen, G.A.M. Hurkx, M.P.G. Knuvers |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Physics
Tunnel effect Effective mass (solid-state physics) Condensed matter physics Computer simulation Electric field Spontaneous emission Electrical and Electronic Engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Current density Quantum tunnelling Electronic Optical and Magnetic Materials Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 39:331-338 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.121690 |
| Popis: | A recombination model for device simulation that includes both trap-assisted tunneling (under forward and reverse bias) and band-to-band tunneling (Zener tunneling) is presented. The model is formulated in terms of analytical functions of local variables, which makes it easy to implement in a numerical device simulator. The trap-assisted tunneling effect is described by an expression that for weak electric fields reduces to the conventional Shockley-Read-Hall (SRH) expression for recombination via traps. Compared to the conventional SRH expression, the model has one extra physical parameter, the effective mass m*. For m*=0.25 m/sub 0/ the model correctly describes the experimental observations associated with tunneling. The band-to-band tunneling contribution is found to be important at room temperature for electric fields larger than 7*10/sup 5/ V/cm. For dopant concentrations above 5*10/sup 17/ cm/sup -3/ or, equivalently, for breakdown voltages below approximately 5 V, the reverse characteristics are dominated by band-to-band tunneling. > |
| Databáze: | OpenAIRE |
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