Spectroscopic characterization of polysilicon solar cells

Autor:	S. B. Manamohanan, R. K. Garg, Srividhya Parthasarathi, M M Pradhan
Rok vydání:	1995
Předmět:	Materials science Silicon Diffusion Analytical chemistry chemistry.chemical_element Float-zone silicon law.invention chemistry Mechanics of Materials Elemental analysis law Impurity Solar cell General Materials Science Emission spectrum Fourier transform infrared spectroscopy
Zdroj:	Bulletin of Materials Science. 18:103-106
ISSN:	0973-7669 0250-4707
Popis:	Polysilicon ingots were made by float zone, using solar grade silicon (SOG-Si) prepared by acid leaching of metallurgical grade silicon (MG-Si). Impurity contents of the MG-Si and SOG-Si were analysed by emission spectroscopy and Fourier transform infrared spectroscopy. The main metal impurities Ca, Al, Fe, Cu, Mn, Mg, V, Ti and Zn and non-metal impurities C, O and B present in the two types of samples were determined. Elemental analysis for a knowledge of the impurity content is important to correlate its effect on the spectral response and diffusion length of minority carrier, and to determine solar cell process reliability. Spectral response and diffusion length for float zone silicon solar cell have been determined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::97262825f7fb1631582c228a15c4a3e3 https://doi.org/10.1007/bf02747528 Zobrazit plný text záznamu Full text from SpringerLink