Radiation-induced transformations of luminescence centers in anion-defective alumina crystals under high-dose irradiations

Autor:	V. A. Pustovarov, T.V. Shtang, V. S. Kortov
Rok vydání:	2015
Předmět:	Nuclear and High Energy Physics Range (particle radiation) Photoluminescence Materials science business.industry Trapping Photochemistry Ion Optoelectronics Charge carrier Irradiation business Luminescence Spectroscopy Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 353:42-45
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2015.04.039
Popis:	Luminescent spectroscopy is used to show formation of new trapping centers of charge carriers in anion-defective alumina crystals at radiation-induced transformations of F and F + -centers created by oxygen vacancies when exposed to high-dose gamma-radiation. A new wide band in the range 440–700 nm was registered in the photoluminescence spectrum at excitations with UV photons. High-dose irradiation of the crystals leads to appearance of F 2 -type aggregate centers in different charged states. These centers are additional traps of charge carriers. The new traps increase a luminescent yield at high-dose irradiation with gamma-rays and an electron beam.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::971d2e5a5666f1a658ba27475c5d19dd https://doi.org/10.1016/j.nimb.2015.04.039 Zobrazit plný text záznamu Full Text from ScienceDirect