Growth and layer structure optimization of 2.26μm (AlGaIn)(AsSb) diode lasers for room temperature operation

Autor:	Marcel Rattunde, S. Simanowski, J. Schmitz, M Walther, C. Mermelstein, Joachim Wagner, N. Herres, Rudolf Kiefer, G Weimann
Rok vydání:	2001
Předmět:	Materials science business.industry Far-infrared laser Condensed Matter Physics Laser law.invention Semiconductor laser theory Inorganic Chemistry Optics law Optical cavity Materials Chemistry Optoelectronics Quantum efficiency business Quantum well Diode Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :595-599
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)00779-5
Popis:	The optimization of MBE growth conditions and layer structures for room temperature operation of 2.26mm AlGaAsSb/GaInAsSb laser structures is investigated. Index guided triple quantum well large optical cavity diode lasers with 64mm � 1000mm cavities and high reflection/antireflection coated facets reveal a cw output power of 350 mW at T ¼ 280 K. An internal quantum efficiency Zi of 69%, internal losses ai of 7.7 cm � 1 and a threshold current density for infinite cavity length of j1 ¼ 144 A/cm 2 are obtained for this structure. # 2001 Elsevier Science B.V. All rights reserved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::97197c5f505d8e5581f2810ee86f4a78 https://doi.org/10.1016/s0022-0248(01)00779-5 Zobrazit plný text záznamu Full Text from ScienceDirect