A New Method for Accurate Extraction of Source Resistance and Effective Mobility in Nanoscale Multifinger nMOSFETs
| Autor: | Yi-Zen Lo, Jyh-Chyrun Guo |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 62:3004-3011 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2015.2453998 |
| Popis: | A new method is is developed for accurate extraction of the effective mobility ( $\mu _{\textrm {eff}}$ ) in the multifinger nMOSFETs with various poly-to-poly (PO-PO) spaces. The wide PO-PO space intends to increase the tensile stress from a contact etching stop layer (CESL) and yields higher $\mu _{\textrm {eff}}$ in the nMOSFETs. However, the source resistance ( $R_{S}$ ) emerges as a critical parasitic element in the multifinger devices with a large finger number. The wide PO-PO space generally leads to the further increase of $R_{S}$ , which may offset $\mu _{\textrm {eff}}$ improvement and degrade transconductance ( $g_{m}$ ). A two-end source line is proposed to reduce $R_{S}$ and the impact on $g_{m}$ . The complicated layout-dependent effects containing the CESL strain, $R_{S}$ , and 3-D fringing capacitances bring a crucial challenge to the $\mu _{\textrm {eff}}$ extraction. In this paper, a distributed transmission line model is derived for a reliable determination of $R_{S}$ , which is a key to the realization of accurate extraction of $\mu _{\textrm {eff}}$ and layout-dependent effects in multifinger devices. |
| Databáze: | OpenAIRE |
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