Study of Schottky barrier of Ni on p-GaN

Autor:	Lisheng Yu, Kei May Lau, SS Lau, Dongjiang Qiao, Yundong Qi, L. Jia
Rok vydání:	2001
Předmět:	Physics and Astronomy (miscellaneous) Chemistry Hall effect Schottky barrier Analytical chemistry Wide-bandgap semiconductor Tunneling current Acceptor Quantum tunnelling Diode
Zdroj:	Applied Physics Letters. 79:4536-4538
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1428773
Popis:	The Schottky barrier characteristics of Ni on p-GaN have been investigated using current–voltage–temperature (I–V–T) and capacitance–voltage characteristics (C–V) measurements. Barrier height values ranging from 2.68 to 2.87 eV were obtained from C–V measurements. The temperature dependence of I–V characteristics clearly indicated the dominance of tunneling current in the transport mechanism of the diodes, therefore, barrier height determination using I–V measurements can lead to erroneous results, as indicated by the wide range of barrier heights reported in the literature. Acceptor concentration, deduced from C–V measurements, was found to be of 1019/cm3 within 200 A of the sample surface, and tapered off to be ∼1018/cm3. These values are 10–100 times higher than the hole concentration of ∼1017/cm3 obtained from Hall measurements.
Databáze:	OpenAIRE
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