Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications

Autor:	R. Schwertberger, J.P. Reithmaier, Alfred Forchel, D. Gold
Rok vydání:	2003
Předmět:	Photoluminescence Nanostructure business.industry Scanning electron microscope Chemistry Heterojunction Condensed Matter Physics Laser Epitaxy law.invention Inorganic Chemistry Optics law Materials Chemistry Self-assembly business Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 251:248-252
ISSN:	0022-0248
Popis:	Self-assembled InAs quantum dashes in the InP system were grown by gas source molecular beam epitaxy. Different growth parameters like buffer material, growth temperature and layer thickness were studied using scanning electron microscopy and photoluminescence measurements. Four layers of InAs dashes were embedded as active material in a SCH laser structure. Device data of broad area and ridge waveguide lasers are presented. Broad area lasers of 100 μm width showed a transparency threshold current density of 330 A/cm 2 and an internal efficiency of 62%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::96ee7fbac31c440b2200b5e0e01f8e60 https://doi.org/10.1016/s0022-0248(02)02371-0 Zobrazit plný text záznamu Full Text from ScienceDirect