Doping behavior of (112‾2) GaN grown on patterned sapphire substrates
| Autor: | Theo Fuchs, Sabine Schörner, Lutz Kirste, Klaus Thonke, Tobias Meisch, Raphael Zeller, Ferdinand Scholz |
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| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science Magnesium business.industry Plane (geometry) Doping chemistry.chemical_element 02 engineering and technology Electroluminescence 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Planar chemistry 0103 physical sciences Sapphire Polar Optoelectronics 0210 nano-technology business |
| Zdroj: | physica status solidi (b). 253:164-168 |
| ISSN: | 0370-1972 |
| DOI: | 10.1002/pssb.201552241 |
| Popis: | authoren We present results of the investigation on the doping behavior of planar semipolar -oriented GaN grown on patterned sapphire substrates mainly focusing on the magnesium incorporation. We observed that Mg is incorporated with much lower efficiency into the plane as compared to polar c-plane GaN. This problem could be decreased by varying the growth temperature. We found higher Mg concentrations with constant Mg flow for reduced growth temperature. Simultaneously, the parasitic background carrier concentration was reduced. Using this optimization, a planar semipolar InGaN/GaN-LED on -oriented GaN was grown. Electroluminescence measurements show reasonable electrical and optical performance. |
| Databáze: | OpenAIRE |
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