Transformer coupled stacked FET power amplifiers
| Autor: | J.G. McRory, Ronald H. Johnston, G.G. Rabjohn |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
FET amplifier business.industry Amplifier Transistor Electrical engineering Impedance matching Integrated circuit design law.invention law Hardware_INTEGRATEDCIRCUITS Output impedance Electrical and Electronic Engineering business Transformer Monolithic microwave integrated circuit |
| Zdroj: | IEEE Journal of Solid-State Circuits. 34:157-161 |
| ISSN: | 0018-9200 |
| DOI: | 10.1109/4.743760 |
| Popis: | The development of high-power linear ultrahigh-frequency amplifiers is made difficult by the low impedance of the devices used in the output stage, which causes matching difficulties and high radio-frequency current levels. A stacked field-effect transistor (FET) configuration is shown to reduce these problems with its increased output impedance and lower current required for a given output power. A linear analysis of the stacked FET configuration is given. Two class A monolithic microwave integrated circuit amplifiers are developed and subjected to one- and two-tone tests to demonstrate the performance of the stacked FET as a power amplifier at 900 MHz. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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