Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
| Autor: | Masaki Miyazato, Hirokazu Fujiwara, Hajime Okumura, Tomohisa Kato, Yoshiyuki Yonezawa, Masaaki Miyajima, Kimimori Hamada, Akihiro Otsuki, Yohei Iwahashi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Drop (liquid) Stacking Nucleation 02 engineering and technology Activation energy 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Current pulse Crystallography Mechanics of Materials 0103 physical sciences Partial dislocations General Materials Science 0210 nano-technology Stacking fault Diode |
| Zdroj: | Materials Science Forum. 897:218-221 |
| ISSN: | 1662-9752 |
| Popis: | We investigated the expansion of stacking faults (SFs) under a high current pulse stress in detail. In situ observations showed bar-shaped SFs and two types of triangle SFs with different nucleation sites. The calculated partial dislocation velocity of the bar-shaped SFs was four times faster than that of the triangle SFs. The temperature dependence of the partial dislocation velocity was used to estimate activation energies of 0.23±0.02 eV for bar-shaped SFs and 0.27±0.05 eV for triangle SFs. We also compared the electrical characteristics before and after the stress. The forward voltage drop slightly increased by 0.05 V, and the leakage current did not increase. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|