Impacts of O2 Plasma on Negative Gate Bias Stress Instability of Tunnel Thin-Film Transistor
| Autor: | Yan-Shiuan Chang, Po-Jen Chen, William Cheng-Yu Ma, Jhe-Wei Jhu, Ting-Hsuan Chang |
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| Rok vydání: | 2021 |
| Předmět: |
Nuclear and High Energy Physics
Negative-bias temperature instability Materials science Transistor Analytical chemistry Plasma Condensed Matter Physics 01 natural sciences Instability 010305 fluids & plasmas Threshold voltage law.invention Stress (mechanics) Thin-film transistor law 0103 physical sciences Degradation (geology) |
| Zdroj: | IEEE Transactions on Plasma Science. 49:15-20 |
| ISSN: | 1939-9375 0093-3813 |
| DOI: | 10.1109/tps.2020.3015729 |
| Popis: | In this work, the impacts of oxygen (O2) plasma treatment on the performance and negative bias temperature instability (NBTI) of tunnel thin-film transistors (T-TFTs) with polycrystalline-silicon channel material are studied. After O2 plasma treatment, the T-TFT exhibits that the minimum leakage current is suppressed from 134 to 7 pA and the subthreshold swing (SS) is decreased from 0.602 to 0.508 V/decade. In addition, the degradation of SS and threshold voltage ( $V_{\text {TH}}$ ) of T-TFT with O2 plasma after NBTI stress for 1000 s are suppressed from 0.779 to 0.319 V/decade and 1.28 to −0.82 V, respectively. The degradation of on-state current is also improved significantly from −87% to −40% when the T-TFT is passivated by the O2 plasma. Moreover, the T-TFT with O2 plasma exhibits less stress voltage-dependent electrical degradation of NBTI than it without O2 plasma. When the stress voltage of NBTI increases, two-step $V_{\text {TH}}$ shift behavior of T-TFT with O2 plasma is observed due to the competition of hole trapping effect and SS degradation effect. Furthermore, the T-TFT with O2 plasma shows less electrical degradation quantity than it without O2 plasma when the temperature of NBTI is increased from 25 °C to 75 °C. |
| Databáze: | OpenAIRE |
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