| Autor: |
Paul P. Horley, Olena O. Galochkina, V. V. Khomyak, Jesús González-Hernández, Yuri V. Vorobiev, Peter M. Gorley |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Solar Energy. 82:100-105 |
| ISSN: |
0038-092X |
| DOI: |
10.1016/j.solener.2007.07.004 |
| Popis: |
Using two-temperature synthesis method with the further directed crystallization under the radial and slight horizontal temperature gradients, facilitating the convection and mixing of the melt, the authors obtained monocrystals of n- and p-CuInSe2 with controlled deviation from the stoichiometry using the excess In and Se. We have carried out the measurements of the conductivity and Hall coefficient in the temperature interval 70–415 K and investigated Hall mobility as the function of temperature, determining the dominating carrier scattering mechanisms. It was found that the electrical properties of n- and p-CuInSe2 are caused by the defects of various types depending on the growth conditions and stoichiometry deviations. The energy position of the impurity levels was identified to be 0.055 ± 0.003 eV and 0.022 ± 0.003 eV above the valence band for acceptor levels and 0.010 ± 0.002 eV below the conduction band for the donor level. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect