Current-voltage characteristics of submicrom GaAs MESFETs with nonuniform channel doping profiles
| Autor: | Ko-Ming Shih, D.P. Klemer, Juin J. Liou |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
business.industry
Chemistry Doping Transistor Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Current voltage law Electric field Materials Chemistry Electronic engineering Optoelectronics MESFET Electrical and Electronic Engineering business Critical field Saturation (magnetic) Doping profile |
| Zdroj: | Solid-State Electronics. 35:1639-1644 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(92)90191-e |
| Popis: | We present a physics-based model for GaAs metal semiconductor field-effect transistors (MESFETs). The present model improves an existing model by allowing the possibility that the electric field near the source region can exceed a critical field, which is likely in an advanced submicrom MESFET operated in the quasi-saturation or saturation region. Furthermore, a realistic and nonuniform channel doping profile was considered in our calculations. Experimental data measured from a low-noise, ion-implanted MESFET are included in support of the model. The effects of different doping profiles and velocity profiles in the channel on the MESFET current-voltage characteristics were also investigated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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