Ge/sub x/Si/sub 1-x//silicon inversion-base transistors: theory of operation
| Autor: | R.C. Taft, J.D. Plummer |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon business.industry Heterojunction bipolar transistor Bipolar junction transistor Transistor Electrical engineering chemistry.chemical_element Space charge Electronic Optical and Magnetic Materials law.invention chemistry law Quantum dot Optoelectronics Field-effect transistor Electrical and Electronic Engineering Theory of operation business |
| Zdroj: | IEEE Transactions on Electron Devices. 39:2108-2118 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.155893 |
| Popis: | A theoretical study of the device characteristics of the Ge/sub x/Si/sub 1-x//silicon inversion-base transistor (BICFET) is presented. This transistor uses the space charge of holes in a modulation-doped inversion channel to control vertical electron transport. This study is of interest not only because of the unique interaction of transport mechanisms in the BICFET but also because the BICFET is very well suited to the Ge/sub x/Si/sub 1-x//Si system, and offers substantial performance advantages over the BJT. The device characteristics presented are based on a numerical and analytical analysis using the drift-diffusion formalism. The effects that quantum confinement and non-semi-classical transport have on this structure are presented. The authors conclude with a comparison between the Ge/sub x/Si/sub 1-x//Si BICFET and Ge/sub x/Si/sub 1-x//Si HBT. > |
| Databáze: | OpenAIRE |
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