| Autor: |
M.C.M. van de Sanden, G Gijs Dingemans, Jjh Joost Gielis, Bram Hoex, N.M. Terlinden, V Vasco Verlaan, Wilhelmus M. M. Kessels |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 34th IEEE Photovoltaic Specialists Conference (PVSC). |
| DOI: |
10.1109/pvsc.2009.5411651 |
| Popis: |
Recently, we have demonstrated that ultrathin (≪30 nm) films of Al 2 O 3 synthesized by (plasma-assisted) atomic layer deposition (ALD) provide an excellent level of surface passivation of c-Si which may find important applications in (high-efficiency) solar cells. In this contribution, the Al 2 O 3 passivation mechanism has been further elucidated by the contactless characterization of the c-Si/Al 2 O 3 interface by optical second-harmonic generation (SHG). SHG has revealed effective field-effect passivation of the c-Si surface caused by a negative fixed charge density of 5×1012 cm−2 in an annealed, 11 nm thick Al 2 O 3 film while it is on the order of 1011 cm™2 in the as-deposited film which shows negligible passivation. A comparison with SHG measurements on a 84 nm thick a-SiN x :H film treated in a conventional firing furnace has revealed the presence of a positive fixed charge density of 2×1012 cm−2 which further corroborates the SHG analysis and results. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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