Influence of N2O/TEGa Ratio on Deposition of β-Ga2O3 Films and Performance of Au-β-Ga2O3-Au Solar-Blind Photodetectors

Autor:	Tai-Yuan Lin, Chun-Ying Huang, Guan-Yu Lin, Feng-Hsuan Hsu, Cheng-Ping Chou, Zi-Ling Huang, Jyh-Rong Gong, Pei-Te Lin, Yen-Yang Liu, Pei-Chun Liao, Yu-Hsiang Peng
Rok vydání:	2021
Předmět:	Materials science business.industry Optoelectronics Photodetector business Deposition (chemistry) Electronic Optical and Magnetic Materials
Zdroj:	ECS Journal of Solid State Science and Technology. 10:057001
ISSN:	2162-8777 2162-8769
DOI:	10.1149/2162-8777/abfa2b
Popis:	In this study, a series of β-Ga2O3 films are prepared by using triethylgallium (TEGa) and nitrous oxide (N2O) as precursors to explore the effect of N2O/TEGa ratio on the characteristics of β-Ga2O3 films. A metal/semiconductor/metal (MSM)-type solar blind ultraviolet (UV) photodetector (PD) is fabricated using as-prepared β-Ga2O3 film. It is found that an increment of N2O/TEGa ratio tends to suppress the oxygen vacancies in β-Ga2O3 film so the device performance can be significantly improved. This work gives a deep insight into the impact of TEGa/N2O ratio for depositing β-Ga2O3 on the film quality, the surface morphology, the chemical composition and the device performance for UV PDs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::96bbe2eef4636b4a7e8ee611afa30ead https://doi.org/10.1149/2162-8777/abfa2b Zobrazit plný text záznamu