A Novel Double HBT-Based Capacitorless 1T DRAM Cell With Si/SiGe Heterojunctions
| Autor: | Daeyoun Yun, Jieun Lee, Hagyoul Bae, Euiyoun Hong, Dong Myong Kim, Jaeman Jang, Ja Sun Shin, Dae Hwan Kim |
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| Rok vydání: | 2011 |
| Předmět: |
Dynamic random-access memory
Materials science business.industry Band gap Heterojunction bipolar transistor Bipolar junction transistor Electrical engineering Heterojunction Band offset Electronic Optical and Magnetic Materials Silicon-germanium law.invention chemistry.chemical_compound chemistry law Optoelectronics Electrical and Electronic Engineering business Dram |
| Zdroj: | IEEE Electron Device Letters. 32:850-852 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2142390 |
| Popis: | We propose a novel double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe heterojunction for a possible next-generation DRAM cell. It has a body with a narrow bandgap and a valence band offset between the source/drain and the body. Through an extended investigation via TCAD simulation, we verified the advantages of the proposed DHBT-based 1T DRAM cell, including an improved excess carrier generation rate, a high current gain, a large sensing margin, and a suppressed sensitivity to the bandgap-narrowing effect in the heavily doped source and drain. |
| Databáze: | OpenAIRE |
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