Excitation Transfer in Vertically Stacked in (Ga)As/GaAs Quantum Rings

Autor:	M.A. Maaref, Daniel Granados, Jorge M. Garcia, Juan P. Martínez-Pastor, W. Ouerghui, R. Naouari, J. Gomis
Rok vydání:	2012
Předmět:	Coupling Physics Condensed Matter::Materials Science Condensed matter physics Quantum dot Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Ground state Quantum Order of magnitude Excitation WKB approximation Quantum tunnelling
Zdroj:	Journal of Modern Physics. :471-475
ISSN:	2153-120X 2153-1196
DOI:	10.4236/jmp.2012.36063
Popis:	Carrier tunnelling through GaAs barriers of different thicknesses is investigated in vertically InGaAs/GaAs quantum rings (QR’s). Shorter PL decay time of the ground state emission of high-energy component in the sample with thicker spacer (1.5 nm) is ascribed to both tunnelling effect between the two QR families and vertical coupling between layers in the stacks. We found that tunnelling time between QR’s followed the Wentzel-Kramers-Brillouin (WKB) approximation. The non resonant tunnelling rate between QR’s is found to be different by one order of magnitude from the rate in quantum dots (QD’s).
Databáze:	OpenAIRE
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