Mean transverse emission energy and surface topography on GaAs (Cs,O) photocathodes
| Autor: | D C Rodway, D J Bradley |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Surface (mathematics)
Materials science Acoustics and Ultrasonics Physics::Instrumentation and Detectors Astrophysics::High Energy Astrophysical Phenomena Photoelectric effect Condensed Matter Physics Photocathode Cathode Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Faceting Transverse plane law Surface structure Atomic physics Energy (signal processing) |
| Zdroj: | Journal of Physics D: Applied Physics. 17:L137-L141 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/17/8/007 |
| Popis: | A study has been made of the relationship between the facetting and surface structure observed upon (111)B and (100)GaAs photocathode surfaces and the mean transverse emission energy of the photoelectrons emitted from these cathodes. It is concluded that the mean transverse emission is largely independent of the degree of facetting and the presence of surface structure; however, a relationship exists between the temperature at which the cathode surface is cleaned and the mean transverse emission energy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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