Optimization of ion‐implanted low noise GaAs metal‐semiconductor field effect transistors

Autor:	H. Kanber, Milton Feng, V. K. Eu
Rok vydání:	1984
Předmět:	Fabrication Materials science business.industry Analytical chemistry General Physics and Astronomy Noise figure Noise (electronics) Buffer (optical fiber) Ion Ion implantation Optoelectronics Equivalent circuit Field-effect transistor business
Zdroj:	Journal of Applied Physics. 56:1171-1176
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.334045
Popis:	This paper presents an investigation of the effects of implantation energy and dose on the noise figure and associated gain of low noise GaAs metal‐semiconductor field effect transistors. Our results show that the noise figure and associated gain in these devices decrease as the implantation energy and the implanted dose increase. rf and dc performance of devices fabricated by direct ion implantation into liquid encapsulated Czochralski substrates, metalorganic chemical vapor deposited buffer layers, and AsCl3 buffer layers have been evaluated. The equivalent circuit elements derived from the S parameters are used to interpret the variation of critical device properties as a function of implantation energy, dose, and gate recess depth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::96a5f51267f948ee426aeae67cd31b64 https://doi.org/10.1063/1.334045 Zobrazit plný text záznamu