Improvements of ozone surface treatment on the electrical characteristics and reliability in HfO2 gate stacks
| Autor: | Yung-Yu Chen, Chao-Hsin Chien, Kon-Tsu Kin, Yu-Tzu Chang, Jen-Chung Lou, Shih-Chang Chen |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Ozone
Silicon business.industry chemistry.chemical_element Trapping Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Hysteresis Reliability (semiconductor) chemistry Optoelectronics Deposition (phase transition) Electrical and Electronic Engineering business Current density High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 84:1898-1901 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2007.04.127 |
| Popis: | In this study, we improved the interfacial properties of high-@k gate stacks with the surface treatment of ozonated water prior to deposition of hafnium oxide (HfO"2). We demonstrated that the Ozone-oxide improved the electrical properties of the HfO"2 gate stack interface in terms of its smoother interface, lower leakage current density, narrower hysteresis width, superior charge trapping effect, and reliability. From these experimental results, we believe that treatment with ozone is an efficient method for the preparation of high-quality interfaces between HfO"2 and silicon surfaces. |
| Databáze: | OpenAIRE |
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