Nanometric plasticity in diamond-turned germanium
| Autor: | D. L. Callahan, J. A. Patten, Jonathan C. Morris, R. O. Scattergood, J. Kulik |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Proceedings, annual meeting, Electron Microscopy Society of America. 52:626-627 |
| ISSN: | 2690-1315 0424-8201 |
| Popis: | This study applies transmission electron microscopy to the analysis of anomalous ductility encountered in the diamond-point turning of semiconducting Ge. Both finished surfaces and turnings are examined. The machined surface exhibits fine parallel tool marks decorated with randomly oriented nanocrystalline Ge fragments as shown in FIG 1. The tool marks are periodic with a period corresponding to a feed pass. The fragments are the displaced debris which remain between each pass of the diamond tool. There are no indications of substantial dislocation activity or microcracks extending below this surface.A fine Ge chip exhibiting a ductile removal morphology is shown in FIG. 2. This type of turning shows fine periodic tool marks as seen on the finished surfaces (FIG. 1) and thickness modulations perpendicular to the tool marks. These thickness modulations are identical to discontinuous shear patterns reported in soft metals turning and point to a shear slip-dominated deformation process; in fact, the general morphology of these chips is virtually indistinguishable from that observed in fine aluminum turnings. |
| Databáze: | OpenAIRE |
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