K-band HBT and HEMT monolithic active phase shifters using vector sum method
Autor: | Tian-Wei Huang, Chung-Hsu Chen, Yu-Chi Wang, Po-Yu Chen, Pane-Chane Chao, Huei Wang |
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Rok vydání: | 2004 |
Předmět: |
Radiation
Materials science business.industry Amplifier Heterojunction bipolar transistor Transistor High-electron-mobility transistor Condensed Matter Physics law.invention Gallium arsenide chemistry.chemical_compound chemistry law K band Electronic engineering Optoelectronics Electrical and Electronic Engineering business Phase shift module Monolithic microwave integrated circuit |
Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 52:1414-1424 |
ISSN: | 1557-9670 0018-9480 |
DOI: | 10.1109/tmtt.2004.827010 |
Popis: | Two monolithic 3-bit active phase shifters using the vector sum method to K-band frequencies are reported in this paper. They are separately implemented using commercial 6-in GaAs HBT and high electron-mobility transistor (HEMT) monolithic-microwave integrated-circuit (MMIC) foundry processes. The MMIC HBT active phase shifter demonstrates an average gain of 8.87 dB and a maximum phase error of 11/spl deg/ at 18 GHz, while the HEMT phase shifter has 3.85-dB average measured gain with 11/spl deg/ maximum phase error at 20 GHz. The 20-GHz operation frequency of this HEMT MMIC is the highest among all the reported active phase shifters. The analysis for gain deviation and phase error of the active phase shifter using the vector sum method due to the individual variable gain amplifiers is also presented. The theoretical analysis can predict the measured minimum root-mean-square phase error 4.7/spl deg/ within 1/spl deg/ accuracy. |
Databáze: | OpenAIRE |
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