The etching of Ti-W in concetrated H2O2 solutions
| Autor: | Monica Scholten, J. J. van Oekel, J. E. A. M. van den Meerakker |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Chemistry
Kinetics technology industry and agriculture Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Kinetic energy Oxygen Isotropic etching Surfaces Coatings and Films Electronic Optical and Magnetic Materials Etching (microfabrication) Materials Chemistry Reactive-ion etching Layer (electronics) Titanium |
| Zdroj: | Thin Solid Films. 208:237-242 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(92)90649-v |
| Popis: | The etching process of Ti-W alloys in concentrated H 2 O 2 solutions is characterized by analytical and microscopic techniques and kinetic experiments. The influence of the Ti-W composition, the composition of the solution and the process parameters on the rate and uniformity of etching is investigated. The kinetics exhibits a clear induction time, because of a top layer that contains oxygen and has a much higher titanium content than the bulk. Etching in pure H 2 O 2 solutions proceeds via surface oxides and is very sensitive to mass transport conditions. This causes a considerable scatter in the kinetic results and a very poor uniformity of etching over larger areas. Addition of a concentrated buffer to the H 2 O 2 solution results in a decreased etch rate, but the reproducibility and uniformity are greatly enhanced. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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