Effect of overlayer thickness on electron emission from Si:Cs-O NEA surfaces

Autor:	J.R. Howorth, M.G. Clark, R. Holtom
Rok vydání:	1976
Předmět:	Materials science Acoustics and Ultrasonics Silicon Solid-state physics Attenuation length Analytical chemistry chemistry.chemical_element Resonance Electron Condensed Matter Physics Acceptor Photocathode Surfaces Coatings and Films Electronic Optical and Magnetic Materials Overlayer chemistry
Zdroj:	Journal of Physics D: Applied Physics. 9:2155-2167
ISSN:	1361-6463 0022-3727
DOI:	10.1088/0022-3727/9/14/023
Popis:	Experimental and theoretical studies of the variation in photoresponse of the Si:Cs-O negative electron affinity (NEA) photocathode with thickness of the Cs-O overlayer and acceptor concentration in the Si bulk, are reported. Resonance transmission peaks in the variation of photoyield with increasing overlayer thickness are predicted and observed. From a comparison of theoretical and experimental curves, the electron attenuation length in the overlayer is estimated to be about 50 AA. The theoretical analysis indicates that the optimum overlayer is metallic with a carrier concentration of about 2*1021 cm-3, varying slightly with bulk acceptor concentration.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::965e0c9a30bd532896b2fa3c0bfcef66 https://doi.org/10.1088/0022-3727/9/14/023 Zobrazit plný text záznamu