Readiness of SiC MOSFETs for Aerospace and Industrial Applications
| Autor: | Brian Lynn Rowden, Fabio Carastro, Rajib Datta, Greg Dunne, Stephen Daley Arthur, David Alan Lilienfeld, Stacey Kennerly, Alexander Viktorovich Bolotnikov, David Richard Esler, Peter Almern Losee, Liangchun Yu, Feng Feng Tao, Maja Harfman-Todorovic, Joseph Lucian Smolenski, Ljubisa Dragoljub Stevanovic, Ravi Raju, Philip Michael Cioffi, Tobias Schuetz |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering business.industry Mechanical Engineering 020208 electrical & electronic engineering 02 engineering and technology Condensed Matter Physics Solar inverter 01 natural sciences Automotive engineering Cost savings Motor drive Improved performance Mechanics of Materials Robustness (computer science) 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Electronic engineering General Materials Science Aerospace business |
| Zdroj: | Materials Science Forum. 858:894-899 |
| ISSN: | 1662-9752 |
| Popis: | This paper highlights ongoing efforts to validate performance, reliability and robustness of GE SiC MOSFETs for Aerospace and Industrial applications. After summarizing ruggedness and reliability testing performed on 1.2kV MOSFETs, two application examples are highlighted. The first demonstrates the 1.2kV device performance in a prototype high frequency 75kW Aviation motor drive. The second highlights the experimental demonstration of a 99% efficient 1.0MW solar inverter using 1.7kV MOSFET modules in a two-level topology switching at 8kHz. Both applications illustrate that SiC advantage is not only in improved performance, but also in significant system cost savings through simplifications in topology, controls, cooling and filtering. |
| Databáze: | OpenAIRE |
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