Comparison of residual stress in deep boron diffused silicon (100), (110) and (111) wafers
| Autor: | Ratnamala Chatterjee, Shaveta, Ramjay Pal, Kajal Jindal, Vinay Gupta, Shankar Dutta, Geeta Saxena |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon Scanning electron microscope Mechanical Engineering Diffusion Analytical chemistry chemistry.chemical_element Condensed Matter Physics symbols.namesake chemistry Mechanics of Materials Residual stress symbols General Materials Science Wafer Boron Raman spectroscopy Layer (electronics) |
| Zdroj: | Materials Letters. 100:44-46 |
| ISSN: | 0167-577X |
| Popis: | Deep boron diffused p++ silicon layer is a powerful tool in determining the thickness of bulk micromachined MEMS structures. However, due to the large incorporation of boron atoms, high levels of residual stress are generated in these structures. But, there is very little report on the estimation of residual stress in deep boron diffused p++ silicon layer. This paper presents the optimization of deep boron diffusion (boron concentration >5×10 19 atoms/cm 3 having thickness >10 μm) in silicon (100), (110) and (111) wafers. The silicon samples are characterized (before and after the diffusion process) using Raman spectroscopy and scanning electron microscopy (SEM). From this study, the residual stress generated for the Si(100), (110) and (111) samples are 454.61 MPa, 908.58 MPa and 908.67 MPa respectively. Disparities in residual stress values in the silicon wafers are also correlated. |
| Databáze: | OpenAIRE |
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