High-temperature (T⩾400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers

Autor:	Quankui Yang, Klaus Köhler, Wolfgang Bronner, Frank Fuchs, Ch. Mann
Rok vydání:	2005
Předmět:	business.industry Chemistry Superlattice Mineralogy Condensed Matter Physics Laser Semiconductor laser theory law.invention Inorganic Chemistry Wavelength Cascade law Ultimate tensile strength Materials Chemistry Optoelectronics Thin film business Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 278:714-717
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2005.01.001
Popis:	Conventional strain-compensated quantum cascade (QC) lasers are fabricated with both tensile strained AlInAs and compressively strained GaInAs layers. We show that strain compensation can also be achieved using tensile strained AlInAs barrier layers and lattice-matched GaInAs with thin InAs layers inserted. In the present paper, we use Al 0.6 In 0.4 As as barriers. The tensile strain caused by these barriers is compensated by thin InAs layers inserted into the lattice-matched GaInAs wells. The lasers, mounted epilayer up with as-cleaved facets, operate in pulsed mode up to 400 K (127 °C) at a wavelength of λ∼5.3um. For a laser with a ridge size of 18 μm x 3 mm, the maximum output peak power per facet obtained is 1 W at room temperature (27 °C).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::96376397e24698eb6a1668b5c80658b9 https://doi.org/10.1016/j.jcrysgro.2005.01.001 Zobrazit plný text záznamu Full Text from ScienceDirect