In0.5Ga0.5As/InAlAs Modulation-doped Field Effect Transistors on GaAs Substrates Grown by Low-Temperature Molecular Beam Epitaxy
| Autor: | Inoue Kaoru, Toshinobu Matsuno, Hiroyuki Masato |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Electron mobility
Materials science Condensed matter physics business.industry Transconductance Doping General Engineering General Physics and Astronomy Conductance Crystal growth Heterojunction Condensed Matter::Materials Science Optoelectronics Field-effect transistor business Molecular beam epitaxy |
| Zdroj: | Japanese Journal of Applied Physics. 30:3850 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.30.3850 |
| Popis: | We report on the lattice-mismatched growth and electrical properties of In0.5Ga0.5As/InAlAs modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy using a wide-gap InAlAs graded buffer layer and low-temperature Molecular Beam Epitaxial growth at about 350°C. A drastic reduction in residual carrier accumulation has been achieved, and a high electron mobility at room temperature of 11100 cm2/V·s was obtained with an electron concentration of 3×1012/cm2. It was found that the cause of residual carrier accumulation is related to the growth interruption or temperature rise after the growth of the graded buffer layer. The fabricated Modulation-doped Field Effect Transistors showed low output conductance, good pinch-off characteristics and no kink effect. The higher transconductance of 270 mS/mm was also obtained. |
| Databáze: | OpenAIRE |
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