Gate Voltage Pulse Rising Edge Dependent Dynamic Hot Carrier Degradation in Poly-Si Thin-Film Transistors
| Autor: | Dongli Zhang, Mingxiang Wang, Lekai Chen, Huaisheng Wang |
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| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters. 42:1615-1618 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Dynamic degradation becomes a critical issue for thin-film transistors (TFTs) used in emerging new displays driven by high frequency gate voltage ${V}_{\text {G}}$ pulses. In this study, ${V}_{\text {G}}$ pulse rising edge dependent dynamic hot carrier degradation of poly-Si TFTs is investigated. It is demonstrated that rising edge of ${V}_{\text {G}}$ pulses which swing within the OFF-state of TFTs causes the degradation, while that of normal ${V}_{\text {G}}$ pulses which switch between the ON and OFF states across the flat band voltage ${V}_{\text {FB}}$ of TFTs does not. Based on transient TCAD simulation, the underlying mechanism of rising edge dependent degradation is proposed, which is based on the non-equilibrium PN junction degradation model previously proposed to explain ${V}_{\text {G}}$ pulse falling edge dependent degradation of poly-Si TFTs. Hence, the dynamic degradation model of poly-Si TFTs related to both rising and falling edge of the ${V}_{\text {G}}$ pulses can be unified now, which is applicable to fast gate pulses with steep rising and/or falling edges in sub- $\mu \text{s}$ level. |
| Databáze: | OpenAIRE |
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