Hot Carrier Transport in SiGe/Si Two-Dimensional Hole Gases

Autor:	Evan H. C. Parker, Terry E. Whall, N. L. Mattey, G. Brunthaler, Gerrit E. W. Bauer, G. Braithwaite, P. J. Phillips
Rok vydání:	1996
Předmět:	Condensed Matter::Materials Science Energy loss Materials science Condensed matter physics Phonon Scattering Deformation (meteorology) Piezoelectric coupling Piezoelectricity Quantum well
Zdroj:	Hot Carriers in Semiconductors ISBN: 9781461380351
DOI:	10.1007/978-1-4613-0401-2_103
Popis:	The hot carrier energy loss rate in a two dimensional hole gas in compressively strained SiGe quantum wells has been studied for samples with a Ge content (x= 0.2) and carrier concentrations ranging from 3x1011 to 7x1011cm−2. The energy loss in this highly non-parabolic system is dominated by acoustic phonon deformation potential scattering, whereas the piezoelectric interaction is negligible.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::9634264d138ba056e7f6b0291e2c42bc https://doi.org/10.1007/978-1-4613-0401-2_103 Zobrazit plný text záznamu