SiO[sub 2] Films Deposited by APCVD with a TEOS/Ozone Mixture and Its Application to the Gate Dielectric of TFTs
| Autor: | Jaehong Kim, Hyungsik Park, Sungwook Jung, Kwangyeol Kim, Youngkuk Kim, Junsin Yi, Daeyoung Gong, Kyungsoo Jang, Jinju Park, Byoungdeog Choi, Wonbaek Lee, Jaehyun Cho |
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| Rok vydání: | 2010 |
| Předmět: |
Ozone
Materials science Renewable Energy Sustainability and the Environment business.industry Silicon dioxide Low-temperature polycrystalline silicon Gate dielectric chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Oxygen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Tetraethyl orthosilicate chemistry.chemical_compound chemistry Thin-film transistor Materials Chemistry Electrochemistry Optoelectronics business |
| Zdroj: | Journal of The Electrochemical Society. 157:H182 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.3267039 |
| Popis: | Silicon dioxide (SiO 2 ) films were deposited using atmospheric pressure chemical vapor deposition (APCVD) with tetraethyl orthosilicate (TEOS) and ozone (O 3 ) as reactant gases. These films were used as the gate dielectric of low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs). 0 3 gas was chosen instead of oxygen (0 2 ) gas because the latter is not compatible with the low temperature processing of LTPS TFTs. SiO 2 films deposited at low temperatures ( |
| Databáze: | OpenAIRE |
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