Large-signal microwave transistor modeling using multiharmonic load-pull measurements
| Autor: | Fadhel M. Ghannouchi, Renato G. Bosisio, Rached Hajji |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Engineering
business.industry Transistor Load pull Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Nonlinear system Harmonic balance law Electronic engineering Equivalent circuit Field-effect transistor MESFET Electrical and Electronic Engineering business Electrical impedance |
| Zdroj: | Microwave and Optical Technology Letters. 5:580-585 |
| ISSN: | 1098-2760 0895-2477 |
| DOI: | 10.1002/mop.4650051111 |
| Popis: | This article presents a method of transistor parameter extraction using multiharmonic Load-Pull (MHLP) measurements completed with modified harmonic balance calculations. An advantage of this approach is that the parameters of the nonlinear elements of the transistor are obtained solely from large-signal measurements at the fundamental and the generated harmonic frequencies. The calculated parameters of the nonlinear model of a commercial MESFET (NE 71083), are found suitable for large-signal operating mode at different impedance loading. © 1992 John Wiley & Sons. Inc. |
| Databáze: | OpenAIRE |
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