Effect of nitrogen annealing on the structural, optical and photoluminescence properties of In2O3 thin films
| Autor: | Nasreddine Beji, Najoua Kamoun Turki, Mehdi Souli, Meriem Reghima |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Thin layers Photoluminescence Band gap business.industry Annealing (metallurgy) Mechanical Engineering Metals and Alloys 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Optics Mechanics of Materials 0103 physical sciences Materials Chemistry Optoelectronics Crystallite Thin film 0210 nano-technology business Refractive index |
| Zdroj: | Journal of Alloys and Compounds. 675:231-235 |
| ISSN: | 0925-8388 |
| Popis: | The effect of heat treatment under nitrogen atmosphere on the structural, optical and photoluminescence properties of In2O3 thin films was studied in this work. In2O3 thin layers were annealed at 250 and 450 °C during 1 and 2 h. All heated films are polycrystalline and crystallize in to the body centered cubic structure with (400) as preferred orientation. Optical properties reveal an enhancement of transmission T in the transparency zone for 250 °C during 2 h and 450 °C during 1 h (T is of about 75%). Transmission and reflection spectra of the films exhibit interferences fringes which is characteristics of thickness uniformity and surface homogeneity. The heated films show a large band gap energy Eg varying from 3.41 to 3.49 eV. The refractive index was investigated using the envelope method. The extinction coefficient k, dielectric constant er, packing density p and porosity were also studied using the refractive index results. The single oscillator energy E0 and dispersion energy Ed were determined using Wemple oscillatory model based on the envelope method. The obtained results lead to conclude that annealed In2O3 thin films is a good candidate to be used in many optoelectronic devices and especially as optical window in modern solar cells. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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