2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

Autor:	Jerry A. Simmons, H. C. Chui, N. E. Harff, M. E. Sherwin, B. E. Hammons
Rok vydání:	1996
Předmět:	chemistry.chemical_compound Electron mobility Arsine Physics and Astronomy (miscellaneous) chemistry Impurity Inorganic chemistry chemistry.chemical_element Metalorganic vapour phase epitaxy Chemical vapor deposition Epitaxy Carbon Quantum well
Zdroj:	Applied Physics Letters. 68:208-210
ISSN:	1077-3118 0003-6951
Popis:	We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two‐dimensional electron gases (2DEGs) with electron mobilities up to 2.0×106 cm2/V s at 0.3 K. These are the highest mobilities to date for MOCVD materials, and were achieved using a safer replacement precursor for arsine, tertiarybutylarsine (TBA). For structures grown using arsine, we obtained a maximum mobility of 1.0×106 cm2/V s, which although comparable to the best by MOCVD to date, is half that obtained using TBA. Our studies on thick GaAs and AlGaAs layers indicate that the use of TBA in place of arsine reduces both the carbon and donor impurity concentrations. Thus, TBA is not only a safe alternative to arsine, but also produces significantly purer films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::961f0a6cbc533955e9ec7105154bfbfe https://doi.org/10.1063/1.116462 Zobrazit plný text záznamu