| Autor: |
Kyung-Hwa Kim, Hyung-Soo Ahn, Min Yang, Seon-Min Bae, Se-Gyo Jung, Ah-Reum Lee, Sam-Nyeong Yi, Jin-Eun Ok, Dong-Wan Jo, Jong-Seong Bae, Hunsoo Jeon, Gang-Seok Lee, Hong-Ju Ha |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
Journal of the Korean Crystal Growth and Crystal Technology. 20:107-112 |
| ISSN: |
1225-1429 |
| DOI: |
10.6111/jkcgct.2010.20.3.107 |
| Popis: |
The Cu is the absorber material for thin film solar cell with high absorption coefficient of . In the case of CIGS, the movable energy band gap from (1.00 eV) to (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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