Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)
| Autor: | Chih-Chung Yang, Sheng-Hung Chen, Hao-Tsung Chen, Charng-Gan Tu, Yean-Woei Kiang, Chen-Yao Chao |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Diffusion Doping Flow (psychology) Analytical chemistry Gallium nitride Nanotechnology 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology 01 natural sciences law.invention 010309 optics chemistry.chemical_compound chemistry Coating law 0103 physical sciences engineering Metalorganic vapour phase epitaxy 0210 nano-technology Layer (electronics) Light-emitting diode |
| Zdroj: | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI. |
| DOI: | 10.1117/12.2249540 |
| Popis: | In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to |
| Databáze: | OpenAIRE |
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