A MOCVD reactor safety system for a production environment

Autor: Raymond K. Tsui, Jay Curless, Neal J. Mellen, Eric S. Johnson, D. Convey
Rok vydání: 1984
Předmět:
Zdroj: Journal of Crystal Growth. 68:497-501
ISSN: 0022-0248
DOI: 10.1016/0022-0248(84)90456-1
Popis: MOCVD growth of GaAs frequently is accomplished using trimethylgallium and arsine. Although these materials are presently used safely worldwide in a research environment, their hazardous nature is an important consideration in the application of MOCVD to production. This paper describes a MOCVD reactor safety-interlock and automatic shutdown system now being evaluated on a research reactor for its suitability in a production environment. Some specific features employed are fire detection, reactor overpressure prevention, and toxic gas exposure control. This paper will also discuss the technique used to remove As and AsH 3 from the reactor exhaust.
Databáze: OpenAIRE