Autor: |
Raymond K. Tsui, Jay Curless, Neal J. Mellen, Eric S. Johnson, D. Convey |
Rok vydání: |
1984 |
Předmět: |
|
Zdroj: |
Journal of Crystal Growth. 68:497-501 |
ISSN: |
0022-0248 |
DOI: |
10.1016/0022-0248(84)90456-1 |
Popis: |
MOCVD growth of GaAs frequently is accomplished using trimethylgallium and arsine. Although these materials are presently used safely worldwide in a research environment, their hazardous nature is an important consideration in the application of MOCVD to production. This paper describes a MOCVD reactor safety-interlock and automatic shutdown system now being evaluated on a research reactor for its suitability in a production environment. Some specific features employed are fire detection, reactor overpressure prevention, and toxic gas exposure control. This paper will also discuss the technique used to remove As and AsH 3 from the reactor exhaust. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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