High field hole velocity and velocity overshoot in silicon inversion layers
| Autor: | D. Sinitsky, Jeffrey Bokor, Fariborz Assaderaghi, Chenming Hu |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Electron mobility
Drift velocity Materials science Silicon business.industry Velocity saturation Electrical engineering Computer Science::Software Engineering chemistry.chemical_element Saturation velocity Electronic Optical and Magnetic Materials chemistry Velocity overshoot MOSFET High field Electrical and Electronic Engineering Atomic physics business |
| Zdroj: | IEEE Electron Device Letters. 18:54-56 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.553042 |
| Popis: | We report measurements of the drift velocity of holes in silicon inversion layers. The saturation velocity of holes at 300 K is found to be strongly dependent on the effective vertical field. No hole velocity overshoot was observed down to 0.16 /spl mu/m channel length at room temperature. At 77 K, hole velocity saturation is much less pronounced, and a 10% higher average velocity is observed for 0.16 /spl mu/m channel length as compared to 0.36 /spl mu/m channel length. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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