The effect of a weak magnetic field on the mobility of dislocations in silicon

Autor:	L. I. Gonchar, A. A. Skvortsov, A. M. Orlov
Rok vydání:	2001
Předmět:	Materials science Nuclear magnetic resonance Condensed matter physics Silicon chemistry Solid-state physics Ultimate tensile strength General Physics and Astronomy chemistry.chemical_element Dislocation Atmospheric temperature range Spectroscopy Magnetic field
Zdroj:	Journal of Experimental and Theoretical Physics. 93:117-120
ISSN:	1090-6509 1063-7761
DOI:	10.1134/1.1391527
Popis:	The magnetoplastic effect in dislocation silicon is discovered. It is shown that in the presence of tensile stresses (up to 20 MPa), the mechanically activated path of surface dislocation half-loops is limited mainly by the dynamics of defects in various slip systems relative to the applied load. The activation barriers for the motion of dislocations controlled by various conditions in the temperature range T=850–950 K are EaF=2.1±0.1 eV and EaS=1.8±0.1 eV. An increase in the path of surface dislocation half-loops and a change in the activation barriers are detected (EaF=1.4±0.1 eV and EaS=1.6±0.1 eV) after subjecting silicon to a magnetic field (B=0.7 T) for 30 min. Possible reasons behind the observed effects are discussed.
Databáze:	OpenAIRE
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