Hydrogen Instability Induced by Postannealing on Poly-Si TFTs
| Autor: | Chia-Chun Liao, Tien-Sheng Chao, Min-Chen Lin |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon Passivation Hydrogen Annealing (metallurgy) fungi food and beverages chemistry.chemical_element Instability Electronic Optical and Magnetic Materials Threshold voltage chemistry Chemical engineering Thin-film transistor Electronic engineering Electrical and Electronic Engineering Control sample |
| Zdroj: | IEEE Transactions on Electron Devices. 59:1807-1809 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2012.2191411 |
| Popis: | This brief investigates hydrogen instability induced by postannealing. Results show that using a SiN capping layer can prevent the release of hydrogen from a polycrystalline-silicon channel. However, removing this SiN capping layer allows the hydrogen release during postannealing, and the resulting device performance becomes comparable to that of the control sample. Hydrogen release reduces the immunity of PBTI and NBTI. Two possible mechanisms can explain the increased preexisting defects associated with hydrogen release, which affects the NBTI and PBTI. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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