High power, high AlGaN/GaN-HEMTs with novel powerbar design

Autor:	Günther Tränkle, Joachim Würfl, R. Lossy, A. Liero
Rok vydání:	2006
Předmět:	Watt Materials science Switched-mode power supply business.industry Transistor Gallium nitride Power (physics) law.invention chemistry.chemical_compound chemistry law Power module Hardware_INTEGRATEDCIRCUITS Optoelectronics Power semiconductor device business Microwave
Zdroj:	IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
DOI:	10.1109/iedm.2005.1609413
Popis:	Gallium nitride transistors for high power microwave application are often limited by power loss due to extended transistor finger size. A new design for the gate supply is presented which allows for higher power gain compared to conventional transistor designs. Using this technique a linear gain of 20 dB is measured for a packaged power device delivering 28 Watt at 2GHz
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::95e357bcb8211f77c4fcc9b57ef9bb61 https://doi.org/10.1109/iedm.2005.1609413 Zobrazit plný text záznamu