Dielectric relaxation, AC conductivity behavior and its relation to microstructure in mechanochemically synthesized Mn-doped CeO2 nanocrystals
Autor: | Arup Dhara, Prasenjit Maji, Swapan Kumar Pradhan, Sumanta Sain, Sachindranath Das |
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Rok vydání: | 2019 |
Předmět: |
Materials science
Rietveld refinement Analytical chemistry 02 engineering and technology General Chemistry Activation energy Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences 0104 chemical sciences Dielectric spectroscopy Transition metal General Materials Science Charge carrier 0210 nano-technology High-resolution transmission electron microscopy |
Zdroj: | Solid State Sciences. 87:93-100 |
ISSN: | 1293-2558 |
DOI: | 10.1016/j.solidstatesciences.2018.11.009 |
Popis: | A simple mechanical alloying process has been implemented to obtain cerium oxide nanocrystallites monodoped with transition metal element (Mn). The microstructural, compositional and crystallographic information are investigated by employing Rietveld refinement using X-ray diffraction (XRD) data, energy dispersive X-ray (EDX) pattern and analyzing high resolution transmission electron microscopy (HRTEM) images. The results reveal that the sample exhibits a single phase cubic fluorite-type Ce0.95Mn0.05O2-δ structure. Rietveld analysis shows the coexistence of Ce3+ and Ce4+ ions in the sample. HRTEM image reveals the sheer plastic deformation on lattice planes. The frequency and temperature dependent electrical behavior of the undoped, Mn-doped and sintered samples are analyzed by impedance spectroscopy, dielectric relaxation and ac conductivity studies. The correlated barrier hopping (CBH) model has well explained the ac conduction mechanism. The release of electrons during the reduction of Ce4+ and/or Mn4+ ions to Ce3+ and/or Mn3+/Mn2+ ions by the exclusion of excess oxygen in the lattice are responsible for the electronic conductivity of the samples. The activation energy of the sintered sample is estimated both from relaxation and hopping processes and the estimated values ascertain that the charge carrier hopping process in the samples is accompanied by the dielectric relaxation. |
Databáze: | OpenAIRE |
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