Gettering Effect Induced by Oxygen-Deficient Titanium Oxide in InZnO and InGaZnO Channel Systems for Low-Power Display Applications
| Autor: | Yu-Chien Chiu, Yu-Chen Yeh, Chien-Hung Tung, Shiang-Shiou Yen, Chun-Yen Chang, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Po Chun Chen |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
X-ray spectroscopy Materials science business.industry Doping Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Oxide thin-film transistor 01 natural sciences Electronic Optical and Magnetic Materials Indium tin oxide Atomic layer deposition Semiconductor Thin-film transistor 0103 physical sciences Atom Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Display Technology. 12:219-223 |
| ISSN: | 1558-9323 1551-319X |
| DOI: | 10.1109/jdt.2015.2457425 |
| Popis: | This paper reported the IGZO and IZO thin-film transistor (TFT) with titanium-oxide semiconductor as channel capping layer. After the ${\hbox{TiO}}_{x}$ Gettering process, the oxygen vacancies in IGZO channel were successfully modified to maximize the carrier concentration and device mobility. The superior transfer characteristics included a low sub-threshold swing of 79 mV/decade, a very high mobility of ${\hbox{68}}~{\hbox{cm}}^{2}/{\hbox{V}}{\cdot}{\hbox{s}}$ , and good on/off-current ratio of ${\hbox{5.61}}\times {\hbox{10}}^{6}$ . However, the IZO channel with nano-crystallized grains and without Ga atom doping showed unfavorable transistor characteristics. In addition to apparently degraded transfer properties, the spontaneously oxidized ${\hbox{TiO}}_{x}$ capping layer also lead to an increase of channel parasitic resistance that limits the output driving current. Therefore, we believe that the existence of Ga–O bonds among IGZO channel would be helpful to stabilize oxygen diffusion behavior and electric structure during Gettering process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|