Investigation of optimized ohmic contact of direct ITO layer with synchrotron radiation analysis

Autor: Jeong Soo Lee, Taehyeong Kim, Kyuho Park, Jun-Seok Ha, Jun-Ho Jang, Jong-Jae Jung, Minho Joo, Hyun-Joon Shin
Rok vydání: 2006
Předmět:
Zdroj: physica status solidi c. 3:1828-1831
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200565179
Popis: With application of the current transport enhanced layer (CTEL) on the top of p-type GaN, we optimized process conditions, which show the contact resistance of 1.43x10–3 Ω·cm2, using ITO contact layer that has advantages in the enhancement of light extraction efficiency. High-resolution near edge X-ray absorption spectroscopy was used to investigate the interface reaction between GaN / CTEL and ITO layers. Interstitial molecular N2 was directly observed by vibrationally resolved N'K-edge absorption spectroscopy. It is suggested that GaN was chemically changed to gallium oxide (Ga2O3) and nitrogen molecule (N2) [2Ga-N + 3/2 O2 => Ga2O3+N2] during annealing process, and this newly formed layer makes depletion width narrowing for the tunneling properties for the ohmic contact. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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